TK40A10J1 2008-02-05 1 toshiba field effect transis tor silicon n channel mos type (ultra-high-speed u-mos ) TK40A10J1 switching regulator applications ? small gate charge: q g = 76nc (typ.) ? low drain-source on-resistance: r ds (on) = 11.5 m (typ.) ? high forward transfer admittance: |y fs | = 90s ? low leakage current: i dss = 10 a (max) (v ds = 100 v) ? enhancement mode: v th = 1.1 to 2.3 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 100 v drain-gate voltage (r gs = 20 k ) v dgr 100 v gate-source voltage v gss 20 v dc (note 1) i d 40 drain current pulse (note 1) i dp 160 a drain power dissipation (tc = 25c) p d 40 w single pulse avalanche energy (note 2) e as 202 mj avalanche current i ar 40 a repetitive avalanche energy (note 3) e ar 2.4 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the a pplication of high temperature/current/voltage and the significant change in temperature, et c.) may cause this product to decreas e in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/??derating concept and methods??) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 3.125 c/w thermal resistance, channel to ambient r th (ch-a) 62.5 c/w note 1: ensure that the channel and lead temperatures do not exceed 150c. note 2: v dd = 25 v, t ch = 25c, l = 200 h, i ar = 40 a , r g = 1 note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic- sensitive device. handle with care. unit: mm 1: gate 2: drain 3: source jedec ? jeita sc-67 toshiba 2-10u1b weight: 1.7 g (typ.) 1 3 2 internal connection
TK40A10J1 2008-02-05 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = 100 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 100 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = -20 v 60 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 1.1 ? 2.3 v v gs = 4.5 v, i d = 20a ? 13 17 drain-source on resistance r ds (on) v gs = 10 v, i d = 20a ? 11.5 15 m forward transfer admittance ? y fs ? v ds = 10 v, i d = 20 a 45 90 ? s input capacitance c iss ? 4300 ? reverse transfer capacitance c rss ? 230 ? output capacitance c oss v ds = 10v, v gs = 0 v, f = 1 mhz ? 790 ? pf rise time t r ? 14 ? turn-on time t on ? 22 ? fall time t f ? 24 ? switching time turn-off time t off ? 115 ? ns v dd ? 80 v, v gs = 5 v, i d = 40a ? 44 ? total gate charge (gate-source plus gate-drain) qg v dd ? 80 v, v gs = 10 v, i d = 40a ? 76 ? gate-source charge 1 q gs1 ? 11 ? gate-drain (?miller?) charge q gd ? 21 ? gate switch charge q sw v dd ? 80 v, v gs = 10 v, i d = 40a ? 24 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 40 a pulse drain reverse current (note 1) i drp ? ? ? 160 a forward voltage (diode) v dsf i dr = 40 a, v gs = 0 v ? ?0.9 ? 1.2 v reverse recovery time t rr ? 55 ? ns reverse recovery charge q rr i dr = 40 a, v gs = 0 v, di dr /dt = 50 a/ s ? 63 ? nc marking duty 1%, t w = 10 s 0 v 10 v v gs r l = 2.5 v dd ? 50 v i d = 20 a v out 4.7 k40a10j part no. (or abbreviation code) 1 lot no. a line indicates lead (pb)-free finish
TK40A10J1 2008-02-05 3 v gs = 10 v 4.5 1 10 1000 1 100 100 10 tc = ? 55c 25 100 10 100 1 10 1000 100 1 1000 i d = 40 a 10 20 8 12 16 20 0 0.4 0.6 0.8 1 0.2 04 tc = ? 55c 25 100 0 80 160 200 40 120 2 4 0 1 5 3 v gs = 3v 10 8 6 3.5 3.8 4 23 4 5 0 80 120 160 40 01 3.3 v gs = 2.8v 3 3.1 10 4 6 8 0 10 20 30 40 50 0.4 0.6 0.8 1.0 0 0.2 3.3 3.5 ? y fs ? ? i d gate-source voltage v gs (v) i d ? v gs gate-source voltage v gs (v) drain current i d (a) drain-source voltage v ds (v) v ds ? v gs drain current i d (a) forward transfer admittance ? y fs ? (s) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) r ds (on) ? i d drain current i d (a) drain-source on resistance r ds (on) (m ) common source v ds = 10 v pulse test common source tc = 25c pulse test common source tc = 25c pulse test common source v ds = 10v pulse test common source tc = 25c pulse test common source tc = 25c pulse test
TK40A10J1 2008-02-05 4 v dd = 20 v v ds v gs 40v 80v 100 0 60 40 0 40 60 20 0 20 80 100 80 20 4 8 16 12 0 ? 80 0 40 80 120 160 ? 40 0.8 1.6 2.4 3.2 4 c iss c oss c rss 100 0.1 100 1 10 10000 10 1000 v gs = 0 v 10 3 1 4.5 0 ? 0.2 ? 0.4 ? 1.2 1 1000 100 ? 0.8 ? 1.0 10 ? 0.6 0.1 40 i d = 10 a 20 v gs = 10v v gs = 4.5v 0 30 12 18 ? 80 0 40 80 120 160 ? 40 24 6 r ds (on) ? tc case temperature tc (c) drain-source on resistance r ds (on) ( ?m ) i dr ? v ds drain-source voltage v ds (v) drain reverse current i dr (a) common source tc = 25c pulse test v th ? tc gate threshold voltage v th (v) case temperature tc (c) common source v ds = 10 v i d = 1 ma pulse test common source pulse test p d ? tc case temperture tc (c) drain power dissipation p d (w) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) common source v gs = 0 v f = 1 mhz tc = 25c total gate charge q g (nc) gate-source voltage v gs (v) dynamic input / output characteristics drain-source voltage v ds (v) common source i d = 40 a tc = 25c pulse test 50 10 20 40 0 0 80 40 160 120 30
TK40A10J1 2008-02-05 5 25 75 100 150 50 125 60 120 300 0 180 240 1 ms * v dss max 0.1 1 10 1000 0.01 1 10 1000 100 100 0.1 100 s * 10 0.01 10 0.1 1 100 1m 10m 100m 1 10 t p dm t duty = t/t r th (ch-c) = 3.125c/w duty=0.5 0.2 0.1 0.05 0.02 0.01 0.001 r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch-c) single pulse 0 v 20 v test circuit wave form i ar b vdss v dd v ds r g = 1 v dd = 25 v, l = 200 h ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as avalanche energy e as (mj) channel temperature (initial) t ch (c) e as ? t ch drain-source voltage v ds (v) drain current i d (a) safe operating area single pulse ta=25 curves must be derated linearly with increase in temperature. i d max (pulse) * i d max (continuous) dc opeation tc = 25c
TK40A10J1 2008-02-05 6 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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